SI3483DDV-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI3483DDV-T1-GE3


：	SI3483DDV-T1-GE3
：	Mosfets
：	Vishay
：	Single P-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	31.2mΩ
Rated Power Dissipation:	2W
Qg Gate Charge:	9.5nC
Gate-Source Voltage-Max [Vgss]:	20V
Drain Current:	6.4A
Turn-on Delay Time:	15ns
Turn-off Delay Time:	30ns
Rise Time:	33ns
Fall Time:	40ns
Operating Temp Range:	-55°C to +150°C
Gate Source Threshold:	2.2V
Input Capacitance:	580pF
Package Style:	SC-74 (TSOP-6)
Mounting Method:	Surface Mount

3000

3.4556

10366.8

6000

2.8437

17062.2

9000

2.8193

25373.7

12000

2.8021

33625.2

15000

2.7849

41773.5

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