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SI2392ADS-T1-GE3

  • SI2392ADS-T1-GE3
  • SI2392ADS-T1-GE3
  • SI2392ADS-T1-GE3
  • SI2392ADS-T1-GE3
  • SI2392ADS-T1-GE3
  • SI2392ADS-T1-GE3
SI2392ADS-T1-GE3
Mosfets
Vishay
MOSFET 100V .12
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:126mΩ
Rated Power Dissipation:1.25W
Qg Gate Charge:5.2nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:2.2A
Turn-on Delay Time:8ns
Turn-off Delay Time:10ns
Rise Time:10ns
Fall Time:7ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Input Capacitance:196pF
Package Style: SOT-23 (SC-59,TO-236)
Mounting Method:Surface Mount
PDF(1)

3000

3.6635

10990.5

6000

3.5217

21130.2

9000

3.3038

29734.2

12000

3.1619

37942.8

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