SI2319CDS-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI2319CDS-T1-GE3


：	SI2319CDS-T1-GE3
：	Mosfets
：	Vishay
：	P-Channel 40 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	40V
Drain-Source On Resistance-Max:	0.077Ω
Rated Power Dissipation:	2.5\|W
Qg Gate Charge:	21nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

PDF(1)

3000

7.1952

21585.6

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SI2319CDS-T1-GE3

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