SI2318CDS-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI2318CDS-T1-GE3


：	SI2318CDS-T1-GE3
：	Mosfets
：	Vishay
：	N-Channel 40 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	40V
Drain-Source On Resistance-Max:	0.042Ω
Rated Power Dissipation:	2.1W
Qg Gate Charge:	9nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

PDF(1)

3000

3.7395

11218.5

6000

3.5976

21585.6

9000

3.3797

30417.3

12000

3.2378

38853.6

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SI2318CDS-T1-GE3

N-Channel 40 V 0.042 Ohm 2.1 W Surface Moun Power Mosfet - SOT-23-3

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