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SI2315BDS-T1-GE3

  • SI2315BDS-T1-GE3
  • SI2315BDS-T1-GE3
  • SI2315BDS-T1-GE3
  • SI2315BDS-T1-GE3
： SI2315BDS-T1-GE3
： Mosfets
： Vishay
： Single P-Channe
： -
： Reel
： -
TYPEDESCRIPTION
Fet Type:P-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:-12V
Drain-Source On Resistance-Max:0.1Ω
Rated Power Dissipation:0.75W
Qg Gate Charge:15nC
Gate-Source Voltage-Max [Vgss]:8V
Drain Current:-3A
Turn-on Delay Time:20ns
Turn-off Delay Time:70ns
Rise Time:50ns
Fall Time:75ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:-0.9V
Technology:Si
Height - Max:1.02mm
Length:3.04mm
Input Capacitance:715pF
Package Style: SOT-23 (SC-59,TO-236)
Mounting Method:Surface Mount
PDF(1)

3000

3.8813

11643.9

6000

3.6635

21981

9000

3.5217

31695.3

12000

3.3038

39645.6

15000

3.1619

47428.5

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