SI2312CDS-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI2312CDS-T1-GE3


：	SI2312CDS-T1-GE3
：	Mosfets
：	Vishay
：	Single N-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	31.8mΩ
Rated Power Dissipation:	2.1\|W
Qg Gate Charge:	8.8nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

PDF(1)

3000

2.2761

6828.3

6000

1.882

11292

9000

1.8575

16717.5

15000

1.8404

27606

30000

1.816

54480

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SI2312CDS-T1-GE3

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