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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.76Ω |
| Rated Power Dissipation: | 0.22W |
| Qg Gate Charge: | 1.2nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 0.61A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 24ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | Si |
| Height - Max: | 0.6mm |
| Length: | 1.7mm |
| Input Capacitance: | 43pF |
3000
1.3974
4192.2
9000
1.1596
10436.4
15000
1.1438
17157
30000
1.1359
34077
60000
1.118
67080
