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SCT2H12NYTB

  • SCT2H12NYTB
  • SCT2H12NYTB
SCT2H12NYTB
Mosfets
ROHM
N-Channel 1700
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:1700V
Drain-Source On Resistance-Max:1.5Ω
Rated Power Dissipation:44W
Qg Gate Charge:14nC
Gate-Source Voltage-Max [Vgss]:22V
Drain Current:4A
Turn-on Delay Time:16ns
Turn-off Delay Time:35ns
Rise Time:21ns
Fall Time:74ns
Gate Source Threshold:2.8V
Technology:SiC
Input Capacitance:184pF
Package Style: TO-268 (D3PAK)
Mounting Method:Surface Mount
PDF(1)

400

57.9569

23182.76

800

46.8804

37504.32

1200

46.3028

55563.36

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