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R6030ENX

  • R6030ENX
  • R6030ENX
  • R6030ENX
  • R6030ENX
  • R6030ENX
  • R6030ENX
： R6030ENX
： Mosfets
： ROHM
： N-Channel 600 V
： -
： Bag
： -
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:130mΩ
Rated Power Dissipation:86W
Qg Gate Charge:85nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:30A
Turn-on Delay Time:40ns
Turn-off Delay Time:190ns
Rise Time:55ns
Fall Time:60ns
Gate Source Threshold:4V
Input Capacitance:2100pF
Mounting Method:Through Hole

1

58.7376

58.7376

20

53.1441

1062.882

75

50.7164

3803.73

200

49.1385

9827.7

750

46.9841

35238.075

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