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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 5.6mΩ |
| Rated Power Dissipation: | 167W |
| Qg Gate Charge: | 66.8nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 19.3ns |
| Turn-off Delay Time: | 49.4ns |
| Rise Time: | 36.4ns |
| Fall Time: | 32.1ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.7V |
| Technology: | TrenchMOS |
| Input Capacitance: | 3769pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
15.3832
23074.8
3000
12.4393
37317.9
4500
12.2973
55337.85
