取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 4.8MΩ |
| Rated Power Dissipation: | 238W |
| Qg Gate Charge: | 103nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 28ns |
| Turn-off Delay Time: | 80ns |
| Rise Time: | 53ns |
| Fall Time: | 47ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.1V |
| Technology: | TrenchMOS |
| Height - Max: | 1.1mm |
| Length: | 5mm |
| Input Capacitance: | 5890pF |
| Package Style: | LFPAK-56 |
| Mounting Method: | Surface Mount |
1500
27.8984
41847.6
