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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 3.3mΩ |
| Rated Power Dissipation: | 117W |
| Qg Gate Charge: | 49nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 21ns |
| Turn-off Delay Time: | 38ns |
| Rise Time: | 21ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 2754pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
14.238
21357
3000
11.5779
34733.7
4500
11.436
51462
6000
11.3601
68160.6
