TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 27Ω |
Rated Power Dissipation: | 95W |
Qg Gate Charge: | 34.3nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 150A |
Turn-on Delay Time: | 11.6ns |
Turn-off Delay Time: | 23.9ns |
Rise Time: | 17.2ns |
Fall Time: | 15.3ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.45V |
Technology: | Si |
Height - Max: | 1.1mm |
Length: | 5mm |
Input Capacitance: | 2032pF |
1500
5.2443
7866.45
3000
5.0365
15109.5
4500
4.7427
21342.15
7500
4.5249
33936.75