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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 13mΩ |
| Rated Power Dissipation: | 238W |
| Qg Gate Charge: | 75nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 82A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 42ns |
| Rise Time: | 23ns |
| Fall Time: | 21ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 1.05mm |
| Length: | 5mm |
| Input Capacitance: | 3775pF |
1500
23.5814
35372.1
