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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 120mΩ |
| Rated Power Dissipation: | 400mW |
| Qg Gate Charge: | 6.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.4A |
| Turn-on Delay Time: | 4ns |
| Turn-off Delay Time: | 16ns |
| Rise Time: | 11ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.5V |
| Technology: | Si |
| Input Capacitance: | 309pF |
| Mounting Method: | Surface Mount |
5000
1.6984
8492
10000
1.3845
13845
15000
1.3788
20682
20000
1.3644
27288
25000
1.3609
34022.5
