取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 60mΩ |
| Rated Power Dissipation: | 478mW |
| Qg Gate Charge: | 12.7nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.1A |
| Turn-on Delay Time: | 9ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 13ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +150°C |
| Technology: | TrenchMOS |
| Input Capacitance: | 646pF |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
3000
3.0958
9287.4
6000
2.5426
15255.6
9000
2.5183
22664.7
12000
2.501
30012
15000
2.4839
37258.5
