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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 23Ω |
| Rated Power Dissipation: | 1200mW |
| Qg Gate Charge: | 18.6nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 7.2A |
| Turn-on Delay Time: | 8ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 17ns |
| Fall Time: | 32ns |
| Operating Temp Range: | -65°C to +150°C |
| Gate Source Threshold: | 0.9V |
| Technology: | Si |
| Height - Max: | 1mm |
| Length: | 3mm |
| Input Capacitance: | 1150pF |
3000
1.6568
4970.4
9000
1.3623
12260.7
12000
1.358
16296
30000
1.3351
40053
45000
1.3194
59373
