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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 715mΩ |
| Rated Power Dissipation: | 750mW |
| Qg Gate Charge: | 2.9nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 1.1A |
| Turn-on Delay Time: | 6ns |
| Turn-off Delay Time: | 10ns |
| Rise Time: | 8ns |
| Fall Time: | 5ns |
| Operating Temp Range: | -55°C to +150°C |
| Technology: | TrenchMOS |
| Input Capacitance: | 112pF |
| Package Style: | SOT-223 (TO-261-4) |
| Mounting Method: | Surface Mount |
1000
3.3796
3379.6
3000
2.8192
8457.6
5000
2.7849
13924.5
10000
2.7433
27433
20000
2.7017
54034
