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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 105mΩ |
| Rated Power Dissipation: | 1.6W |
| Qg Gate Charge: | 9.9nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.1A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 15ns |
| Rise Time: | 4ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.7V |
| Technology: | TrenchMOS |
| Input Capacitance: | 504pF |
| Mounting Method: | Surface Mount |
3000
4.4588
13376.4
6000
4.241
25446
9000
4.0232
36208.8
12000
3.8153
45783.6
