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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 12V |
| Drain-Source On Resistance-Max: | 33mΩ |
| Rated Power Dissipation: | 1.7W |
| Qg Gate Charge: | 100nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 11.8A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 85ns |
| Rise Time: | 90ns |
| Fall Time: | 57ns |
| Operating Temp Range: | -65°C to +150°C |
| Gate Source Threshold: | 0.9V |
| Technology: | TrenchMOS |
| Height - Max: | 0.65mm |
| Length: | 2.1mm |
| Input Capacitance: | 2875pF |
| Package Style: | SOT-1220 |
| Mounting Method: | Surface Mount |
3000
2.5354
7606.2
6000
2.0998
12598.8
9000
2.0825
18742.5
15000
2.0582
30873
30000
2.0237
60711
