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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 55mΩ |
| Rated Power Dissipation: | 530mW |
| Qg Gate Charge: | 13nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 4.1A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 51ns |
| Rise Time: | 22ns |
| Fall Time: | 22ns |
| Operating Temp Range: | -65°C to +150°C |
| Gate Source Threshold: | 1.25V |
| Technology: | Si |
| Height - Max: | 1mm |
| Length: | 3.1mm |
| Input Capacitance: | 1000pF |
3000
2.4767
7430.1
6000
2.0582
12349.2
9000
2.041
18369
15000
2.0166
30249
30000
1.9823
59469
