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| TYPE | DESCRIPTION |
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 380mΩ/850mΩ |
| Rated Power Dissipation: | 445mW |
| Qg Gate Charge: | 0.45nC/0.76nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 725mA/500mA |
| Turn-on Delay Time: | 6ns/18ns |
| Turn-off Delay Time: | 86ns/80ns |
| Rise Time: | 4ns/30ns |
| Fall Time: | 31ns/72ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.75V/0.8V |
| Technology: | TrenchMOS |
| Input Capacitance: | 55pF/58pF |
| Package Style: | SOT-363 (SC-70-6, SC-88) |
| Mounting Method: | Surface Mount |
3000
1.7156
5146.8
9000
1.4175
12757.5
12000
1.4032
16838.4
30000
1.3795
41385
45000
1.3638
61371
