TYPE | DESCRIPTION |
Fet Type: | Dual N/P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 60V/50V |
Drain-Source On Resistance-Max: | 1.6Ω/7.5Ω |
Rated Power Dissipation: | 500mW |
Qg Gate Charge: | 0.5nC/0.26nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 330mA/170mA |
Turn-on Delay Time: | 5ns/13ns |
Turn-off Delay Time: | 12ns/48ns |
Rise Time: | 6ns/11ns |
Fall Time: | 7ns/25ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.6V |
Input Capacitance: | 33pF/24pF |
Package Style: | SOT-666 |
Mounting Method: | Surface Mount |
4000
3.6634
14653.6
8000
3.5216
28172.8
12000
3.3036
39643.2
16000
3.1618
50588.8