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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 18mΩ |
| Rated Power Dissipation: | 500W |
| Qg Gate Charge: | 283nC |
| Gate-Source Voltage-Max [Vgss]: | 22V |
| Drain Current: | 145A |
| Turn-on Delay Time: | 23ns |
| Turn-off Delay Time: | 49ns |
| Rise Time: | 26ns |
| Fall Time: | 9.6ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.8V |
| Technology: | SiC |
| Input Capacitance: | 4689pF |
| Package Style: | D2PAK-7 |
| Mounting Method: | Surface Mount |
800
463.0232
370418.56
