IXTP76P10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP76P10T


：	IXTP76P10T
：	Mosfets
：	IXYS
：	P-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	25mΩ
Rated Power Dissipation:	298\|W
Qg Gate Charge:	197nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

68.8621

3443.105

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8777.49

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57.6553

14413.825

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56.3582

28179.1

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55.0613

55061.3

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