IXTP4N80P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP4N80P


：	IXTP4N80P
：	Mosfets
：	IXYS
：	N-Channel 800 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	800V
Drain-Source On Resistance-Max:	3.4mΩ
Rated Power Dissipation:	100\|W
Qg Gate Charge:	14.2nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

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