IXTP3N100D2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP3N100D2


：	IXTP3N100D2
：	Mosfets
：	IXYS
：	N-Channel 1000
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	5.5mΩ
Rated Power Dissipation:	125\|W
Qg Gate Charge:	37.5nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

36.2246

1811.23

150

31.3406

4701.09

500

30.1956

15097.8

1000

29.618

29618

2000

29.0405

58081

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