IXTP08N120P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP08N120P


：	IXTP08N120P
：	Mosfets
：	IXYS
：	N-Channel 1200
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	25mΩ
Rated Power Dissipation:	50\|W
Qg Gate Charge:	14nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Through Hole

PDF(1)

45.2833

2264.165

150

38.8185

5822.775

250

38.241

9560.25

1000

36.6603

36660.3

1500

36.2246

54336.9

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