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IXTP05N100

  • IXTP05N100
  • IXTP05N100
IXTP05N100
Mosfets
IXYS
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1000V
Drain-Source On Resistance-Max:17Ω
Rated Power Dissipation:40|W
Qg Gate Charge:10.5nC
Mounting Method:Through Hole
PDF(1)

50

28.7567

1437.835

150

24.8759

3731.385

500

24.0046

12002.3

1000

23.437

23437

2000

23.0014

46002.8

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