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IXTK170P10P

  • IXTK170P10P
  • IXTK170P10P
IXTK170P10P
Mosfets
IXYS
P-Channel 100 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:P-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:12mΩ
Rated Power Dissipation:890|W
Qg Gate Charge:240nC
Package Style: TO-264
Mounting Method:Through Hole
PDF(1)

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56715.5

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