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IXTK102N65X2

  • IXTK102N65X2
  • IXTK102N65X2
： IXTK102N65X2
： Mosfets
： IXYS
： IXTK102N65X2 Se
： -
： Tube
： -
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:30mΩ
Rated Power Dissipation:1040W
Qg Gate Charge:152nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:102A
Turn-on Delay Time:37ns
Turn-off Delay Time:67ns
Rise Time:28ns
Fall Time:11ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5V
Input Capacitance:10.9nF
Mounting Method:Through Hole
PDF(1)

25

250.0152

6250.38

50

208.6028

10430.14

100

201.9962

20199.62

125

199.9799

24997.4875

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