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IXTH30N60L2

  • IXTH30N60L2
  • IXTH30N60L2
IXTH30N60L2
Mosfets
IXYS
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Series:IXTH30N60
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:240mΩ
Rated Power Dissipation:540W
Qg Gate Charge:335nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:30A
Turn-on Delay Time:43ns
Turn-off Delay Time:123ns
Rise Time:65ns
Fall Time:43ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4.5V
Input Capacitance:10.7nF
Package Style: TO-247-3
Mounting Method:Through Hole
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