IXTH2N170D2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH2N170D2


：	IXTH2N170D2
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1700V
Drain-Source On Resistance-Max:	6.5Ω
Rated Power Dissipation:	568\|W
Qg Gate Charge:	110nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

PDF(1)

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