IXTA26P20P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA26P20P


：	IXTA26P20P
：	Mosfets
：	IXYS
：	Single P-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	170mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	56nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

121.6233

6081.165

100

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10106.41

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