IXTA180N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA180N10T


：	IXTA180N10T
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	6.4mΩ
Rated Power Dissipation:	480\|W
Qg Gate Charge:	151nC
Mounting Method:	Surface Mount

PDF(1)

60.0973

3004.865

150

51.3224

7698.36

250

50.4611

12615.275

750

48.7385

36553.875

1250

48.0191

60023.875

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