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IXFT50N85XHV

  • IXFT50N85XHV
  • IXFT50N85XHV
： IXFT50N85XHV
： Mosfets
： IXYS
： N-Channel 850 V
： -
： Tube
： -
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:850V
Drain-Source On Resistance-Max:105mΩ
Rated Power Dissipation:890W
Qg Gate Charge:152nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:50A
Turn-on Delay Time:27ns
Turn-off Delay Time:69ns
Rise Time:30ns
Fall Time:14ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5.5V
Input Capacitance:4480pF
Mounting Method:Surface Mount
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