IXFN62N80Q3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFN62N80Q3


：	IXFN62N80Q3
：	Mosfets
：	IXYS
：	N-Channel 800 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	800V
Drain-Source On Resistance-Max:	140mΩ
Rated Power Dissipation:	960\|W
Qg Gate Charge:	270nC
Package Style:	SOT-227B
Mounting Method:	Surface Mount

PDF(1)

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