IXFN180N25T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFN180N25T


：	IXFN180N25T
：	Mosfets
：	IXYS
：	N-Channel 250 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	250V
Drain-Source On Resistance-Max:	12.9mΩ
Rated Power Dissipation:	900\|W
Qg Gate Charge:	122nC
Package Style:	SOT-227B
Mounting Method:	Surface Mount

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55063.34

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