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IXFH36N60P

  • IXFH36N60P
  • IXFH36N60P
IXFH36N60P
Mosfets
IXYS
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:190mΩ
Rated Power Dissipation:650|W
Qg Gate Charge:102nC
Package Style: TO-247-3
Mounting Method:Through Hole
PDF(1)

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56672.91

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