IXFH30N60P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFH30N60P


：	IXFH30N60P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	240mΩ
Rated Power Dissipation:	500\|W
Qg Gate Charge:	82nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

PDF(1)

122.3428

3670.284

104.6611

9419.499

150

102.7967

15419.505

300

100.3446

30103.38

600

97.9026

58741.56

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