IXFH12N120P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFH12N120P


：	IXFH12N120P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	1.35Ω
Rated Power Dissipation:	543\|W
Qg Gate Charge:	103nC
Mounting Method:	Through Hole

PDF(1)

212.6356

6379.068

177.1204

10627.224

120

171.8007

20616.084

150

170.078

25511.7

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