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IXFA4N100P

  • IXFA4N100P
  • IXFA4N100P
IXFA4N100P
Mosfets
IXYS
N-Channel 1000
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1000V
Drain-Source On Resistance-Max:3.3Ω
Rated Power Dissipation:150|W
Qg Gate Charge:26nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

50

41.5443

2077.215

150

35.6571

5348.565

250

35.0795

8769.875

1000

33.6407

33640.7

1500

33.2151

49822.65

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