TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.065Ω |
Rated Power Dissipation: | 45W |
Qg Gate Charge: | 15nC |
Gate-Source Voltage-Max [Vgss]: | 16V |
Drain Current: | 23A |
Turn-on Delay Time: | 8.5ns |
Turn-off Delay Time: | 12ns |
Rise Time: | 140ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 450pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
2000
11.0354
22070.8
4000
8.9567
35826.8
6000
8.8809
53285.4
8000
8.8152
70521.6