TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 165mΩ |
Rated Power Dissipation: | 1.25W |
Qg Gate Charge: | 14nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 3A |
Turn-on Delay Time: | 12ns |
Turn-off Delay Time: | 88ns |
Rise Time: | 18ns |
Fall Time: | 52ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.5V |
Technology: | Si |
Height - Max: | 1.02mm |
Length: | 3.04mm |
Input Capacitance: | 510pF |
Package Style: | MICRO-3 |
Mounting Method: | Surface Mount |
3000
3.4555
10366.5
6000
2.8365
17019
9000
2.802
25218
12000
2.7849
33418.8
15000
2.7776
41664