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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 19.5mΩ |
| Rated Power Dissipation: | 2.1W |
| Qg Gate Charge: | 11nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 8.7A |
| Turn-on Delay Time: | 4.9ns |
| Turn-off Delay Time: | 19ns |
| Rise Time: | 13ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.1V |
| Technology: | Si |
| Height - Max: | 0.95mm |
| Length: | 2.1mm |
| Input Capacitance: | 1019pF |
| Package Style: | PQFN 2 x 2 mm |
| Mounting Method: | Surface Mount |
4000
3.5216
14086.4
8000
3.3796
27036.8
12000
3.1618
37941.6
16000
3.0199
48318.4
