TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 0.15Ω |
Rated Power Dissipation: | 79W |
Qg Gate Charge: | 34nC |
Gate-Source Voltage-Max [Vgss]: | 16V |
Drain Current: | 17A |
Turn-on Delay Time: | 7.2ns |
Turn-off Delay Time: | 30ns |
Rise Time: | 53ns |
Fall Time: | 26ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 8.77mm |
Length: | 10.54mm |
Input Capacitance: | 800pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1
13.4631
13.4631
50
12.0368
601.84
200
11.5361
2307.22
750
11.1012
8325.9
2500
10.7421
26855.25