TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 13.6mΩ |
Rated Power Dissipation: | 82W |
Qg Gate Charge: | 46nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 51A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 37ns |
Rise Time: | 63ns |
Fall Time: | 39ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 1460pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
12.8649
10291.92
1600
10.5646
16903.36
2400
10.4227
25014.48
3200
10.3566
33141.12
4000
10.2807
41122.8