TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 150V |
Drain-Source On Resistance-Max: | 42mΩ |
Rated Power Dissipation: | 144W |
Qg Gate Charge: | 40nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 33A |
Turn-on Delay Time: | 8.9ns |
Turn-off Delay Time: | 17.2ns |
Rise Time: | 23.1ns |
Fall Time: | 13.1ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 1750pF |
Package Style: | TO-262 (I2PAK) |
Mounting Method: | Through Hole |
1000
22.8619
22861.9
2000
21.7167
43433.4
3000
20.5615
61684.5
4000
19.5582
78232.8