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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 1.6mΩ |
| Rated Power Dissipation: | 294|W |
| Qg Gate Charge: | 216nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 320A |
| Turn-on Delay Time: | 24ns |
| Turn-off Delay Time: | 115ns |
| Rise Time: | 68ns |
| Fall Time: | 68ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Input Capacitance: | 10820pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
38.8226
31058.08
1600
31.06
49696
