TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 2.1mΩ |
Rated Power Dissipation: | 375W |
Qg Gate Charge: | 300nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 293A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 118ns |
Rise Time: | 61ns |
Fall Time: | 69ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 8850pF |
Package Style: | TO-263-7 (D2PAK7) |
Mounting Method: | Surface Mount |
800
65.6157
52492.56